Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7150576 | Solid-State Electronics | 2018 | 17 Pages |
Abstract
Furthermore, based on the established TCAD framework, the relationship between the electron trap parameters and the activation energy (Ea) is comprehensively investigated. It is found that Ea increases with an increase in Ï0, whereas Ea is independent of NOT. In addition, as ÎET increases, Ea decreases in the electron trapping-dominant regime (low ÎET) and increases again in the Poole-Frenkel (PF) emission/hopping-dominant regime (high ÎET). Moreover, our results suggest that the cross-over ÎET point originates from the complicated temperature-dependent competition between the capture rate and the emission rate. The PBTS bias dependence of the relationship between Ea and ÎET suggests that the electric field dependence of the PF emission-based electron hopping is stronger than that of the thermionic field emission-based electron trapping.
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Authors
Jihyun Rhee, Sungju Choi, Hara Kang, Jae-Young Kim, Daehyun Ko, Geumho Ahn, Haesun Jung, Sung-Jin Choi, Dong Myong Kim, Dae Hwan Kim,