Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7150598 | Solid-State Electronics | 2018 | 5 Pages |
Abstract
We report the effect of the oxygen content of the LaAlO3 layer on the synaptic behavior in the Pt/LaAlO3/Nb-doped SrTiO3 memristor for neuromorphic applications. As the oxygen-content decreases, the current becomes larger and the spike time-dependent plasticity (STDP) becomes less sensitive to the time difference between pre- and post-synaptic spike voltage. In addition, the conduction mechanism, which was found to be a combination of thermionic and Poole-Frenkel emissions, and the effect of oxygen content are explained in association with the oxygen vacancy in the LaAlO3 layer. The trade-off between large current and efficient STDP can be controlled by the oxygen content. Furthermore, the results of extracting the synaptic strength-based model parameters indicate that the Pt/LaAlO3/Nb-doped SrTiO3 shows the efficient STDP characteristics in comparison to previously reported memristor materials.
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Jun Tae Jang, Daehyun Ko, Geumho Ahn, Hye Ri Yu, Haesun Jung, Yeon Soo Kim, Chansoo Yoon, Sangik Lee, Bae Ho Park, Sung-Jin Choi, Dong Myong Kim, Dae Hwan Kim,