Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7150689 | Solid-State Electronics | 2017 | 5 Pages |
Abstract
A very low peak voltage GaAs/AlAs resonant tunneling diode (RTD) grown by molecular beam epitaxy (MBE) has been studied in detail. Excellent growth control with atomic-layer precision resulted in a peak voltage of merely 0.28Â V (0.53Â V) in forward (reverse) direction. The peak current density in forward bias is around 15.4Â kA/cm2 with variation of within 7%. As for reverse bias, the peak current density is around 22.8Â kA/cm2 with 4% variation which implies excellent scalability. In this work, we have successfully demonstrated the fabrication of a GaAs/AlAs RTD by using a conventional optical lithography and chemical wet-etching with very low peak voltage suitable for application in low dc input power RTD-based sub-millimetre wave oscillators.
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Mohamad Adzhar Md Zawawi, Mohamed Missous,