| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7150922 | Solid-State Electronics | 2016 | 5 Pages |
Abstract
The effects and mechanisms responsible for charge lateral migration in 3D SONOS devices are studied in detail. We evaluated the electron lateral migration at room temperature and at 150 °C in 3D SONOS devices. Through interpretation of measurements and simulations, we found that lateral migration shows similar emission rates of Poole-Frenkel effect and therefore it is linked to the same trap energy profile. This feature should be included in a model to properly simulate 3D SONOS retention transients. Further experiments and simulations show no influence of SiN thickness nor P/E cycles on lateral migration.
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Lifang Liu, Antonio Arreghini, Geert Van den bosch, Liyang Pan, Jan Van Houdt,