Investigation of the width-dependent static characteristics of graphene nanoribbon field effect transistors using non-parabolic quantum-based model

We conclude that increasing the GNR width in both GNR families increases the leakage current and subthreshold swing, and decreases ION/IOFF ratio. In this scenario, GNR group (3p+1,0) leads to superior off-state performance such that GNR (7,0) has off-state current close to 2.5 × 10−16 A,  five orders of magnitude lower than GNR (6,0) as well as 67 mV/decade subthreshold swing which is much smaller than that of 90 mV/decade in GNR (6,0).