| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7151083 | Solid-State Electronics | 2012 | 6 Pages |
Abstract
⺠Ge surface passivation by scalable multilayer of La2O3/ZrO2. ⺠LaxGeyOz interfacial layers thickness controllable by oxidation time. ⺠Forming gas annealing improves Dit down to 3 Ã 1011 eVâ1 cmâ2 in presence of LaxGeyOz interlayer. ⺠Trade-off between interface trap density and equivalent oxide thickness.
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Authors
Christoph Henkel, Per-Erik Hellström, Mikael Ãstling, Michael Stöger-Pollach, Ole Bethge, Emmerich Bertagnolli,