| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7151089 | Solid-State Electronics | 2012 | 6 Pages |
Abstract
⺠The ALD process using the TEOS precursor has been successfully implemented into the SWS formation of the FinFETs. ⺠The FinFETs with the 25-nm-short extension of the source/drain by using the ALD-SWS have been fabricated. ⺠The performance of the FinFETs has been successfully improved by the reduction of the parasitic resistance.
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Kazuhiko Endo, Yuki Ishikawa, Takashi Matsukawa, Yongxum Liu, Shin-ichi O'uchi, Kunihiro Sakamoto, Junichi Tsukada, Hiromi Yamauchi, Meishoku Masahara,