| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7151107 | Solid-State Electronics | 2012 | 6 Pages |
Abstract
⺠Impact of UTBOX 10 nm w and w/o GP w and w/o Vb on the parasitic bipolar effect. ⺠Thick oxide, higher Vdd devices are more impacted by the parasitic bipolar effect. ⺠However breakdown voltage is still far higher than the Vdd of the technology. ⺠No real impact of GP on the breakdown voltage is seen. ⺠No real impact of Vb on breakdown voltage evolution (Take care of RBB case).
Keywords
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
C. Fenouillet-Beranger, P. Perreau, P. Boulenc, L. Tosti, S. Barnola, F. Andrieu, O. Weber, R. Beneyton, C. Perrot, C. de Buttet, F. Abbate, Y. Campidelli, L. Pinzelli, P. Gouraud, A. Margain, S. Peru, K.K. Bourdelle, B.Y. Nguyen, F. Boeuf,