| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7151111 | Solid-State Electronics | 2012 | 6 Pages |
Abstract
⺠We show a â¼165à increase in power efficiency in Si LEDs with nanoscale contacts. ⺠Our devices are fabricated with a CMOS compatible process. ⺠We support the experimental results with simulation. ⺠Simulation suggest an ideal contact size between 100 and 500 nm.
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Engineering
Electrical and Electronic Engineering
Authors
G. Piccolo, A.Y. Kovalgin, J. Schmitz,