PNP PIN bipolar phototransistors for high-speed applications built in a 180Â nm CMOS process

► Three speed optimized pnp phototransistors built in a 180 nm CMOS process are shown. ► A thick low doped intrinsic layer was implemented between base and collector. ► A thick base-collector space-charge region leads to high bandwidths. ► Optical characterisations were done at 410 nm, 675 nm and 850 nm. ► Bandwidths up to 76.9 MHz and dynamic responsivities up to 2.89 A/W were achieved.