Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7151113 | Solid-State Electronics | 2012 | 9 Pages |
Abstract
⺠Three speed optimized pnp phototransistors built in a 180 nm CMOS process are shown. ⺠A thick low doped intrinsic layer was implemented between base and collector. ⺠A thick base-collector space-charge region leads to high bandwidths. ⺠Optical characterisations were done at 410 nm, 675 nm and 850 nm. ⺠Bandwidths up to 76.9 MHz and dynamic responsivities up to 2.89 A/W were achieved.
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Authors
P. Kostov, W. Gaberl, M. Hofbauer, H. Zimmermann,