Article ID Journal Published Year Pages File Type
7151125 Solid-State Electronics 2012 7 Pages PDF
Abstract
► Experimental evidence of lateral charge migration in planar device is shown. ► A 2D model able to reproduce the retention transients is developed. ► The model is applied to vertical cylindrical device to simulate retention. ► Disturbs to neighboring cells due to lateral charge migration is evaluated. ► Impact of the lateral migrated charge on the cell's string resistance is evaluated.
Keywords
Related Topics
Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
Preview
Comprehensive investigation of the impact of lateral charge migration on retention performance of planar and 3D SONOS devices
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