| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7151130 | Solid-State Electronics | 2012 | 6 Pages |
Abstract
⺠S/D access regions for self-aligned implant-free InGaAs MOSFETs are investigated. ⺠A combination of in situ dopped raised InGaAs S/D with Nickel-InGaAs alloy is proposed to provide low access resistance. ⺠Contact regions are characterized by XPS, RHEED, AFM, SIMS, SEM and electrical measurements. ⺠Gate-first implant-free InGaAs MOSFETs are produced with this innovative contacting scheme.
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
L. Czornomaz, M. El Kazzi, M. Hopstaken, D. Caimi, P. Mächler, C. Rossel, M. Bjoerk, C. Marchiori, H. Siegwart, J. Fompeyrine,