| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7151131 | Solid-State Electronics | 2012 | 8 Pages |
Abstract
⺠The self-heating of SiGe HBTs has been studied through 3D TCAD simulations and pulse measurements. ⺠The influence of back-end metallization on RTH and CTH are investigated. ⺠Recursive network is verified with thermal modeling and found to be in excellent agreement.
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Amit Kumar Sahoo, Mario WeiÃ, Sébastien Fregonese, Nathalie Malbert, Thomas Zimmer,