| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7151137 | Solid-State Electronics | 2012 | 6 Pages |
Abstract
⺠We propose a novel tunnel FET called the electron-hole bilayer tunnel FET. ⺠The device exploits carrier tunneling through a bias-induced electron-hole bilayer. ⺠Device principle and performances are studied by 2D numerical simulations. ⺠Device performances are compared for silicon and germanium implementations. ⺠Nearly ideal average subthreshold slope and high ION/IOFF ratio are obtained.
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Livio Lattanzio, Luca De Michielis, Adrian M. Ionescu,