| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7151143 | Solid-State Electronics | 2012 | 5 Pages |
Abstract
⺠TFETs with a strained Si channel and SiGe source show comparably large on-currents. ⺠The subthreshold slope amounts to 80 mV/dec at 300 K for a drain current range of 3 orders of magnitude. ⺠A biased back-gate improves the performance of the TFET. ⺠The low temperature measurements demonstrate a band to band tunneling transport mechanism.
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Authors
Q.T. Zhao, W.J. Yu, B. Zhang, M. Schmidt, S. Richter, D. Buca, J.-M. Hartmann, R. Luptak, A. Fox, K.K. Bourdelle, S. Mantl,