| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7151154 | Solid-State Electronics | 2012 | 6 Pages |
Abstract
⺠We present an RF amplifier suitable for operation at 13.56 MHz based on normally-on AlGaN/GaN HFETs on semi-insulating SiC. ⺠We report on the suitability for high voltage operation with a breakdown voltage higher than 420 V. ⺠An output power of 139 W is achieved in cw mode and 431 W in pulsed mode respectively. ⺠We examine the device ruggedness with a VSWR of 15:1 without any damage.
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Authors
D. Krausse, F. Benkhelifa, R. Reiner, R. Quay, O. Ambacher,