| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7151155 | Solid-State Electronics | 2012 | 7 Pages |
Abstract
⺠Local oxidation as a local stressor and for stress-limited oxidation. ⺠Integration of local oxidation and metal-gate strain technologies. ⺠Strained GAA Si NWs with sub-5 nm cross-section as high temperature performance FETs. ⺠Scattering mechanism study in highly doped accumulation-mode GAA Si nanowire MOSFET. ⺠Parameter extraction in nanoscale by experiments and TCAD Sentaurus simulation.
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Authors
M. Najmzadeh, D. Bouvet, W. Grabinski, J.-M. Sallese, A.M. Ionescu,