| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7151161 | Solid-State Electronics | 2012 | 5 Pages |
Abstract
⺠We report novel dual-gate suspended-body carbon nanotube field-effect transistors. ⺠Two lateral gates are self-aligned sub-100 nm away from the CNT channel. ⺠We analyze in detail the CNFETs in single-gate (SG) mode and dual-gate (DG) mode. ⺠In SG mode, we observe strong controllability and the tuning effect of dual gates. ⺠In DG mode, we obtain remarkably improved S, Ion and gm.
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Ji Cao, Adrian M. Ionescu,