Article ID Journal Published Year Pages File Type
7151176 Solid-State Electronics 2012 5 Pages PDF
Abstract
► Parasitic bipolar device in PD SOI NMOS device with floating body effect is important. ► Function of the parasitic bipolar device during DC and transient operations is modeled. ► A smaller rise time at gate leads to a faster turn-on due to a stronger parasitic bipolar.
Keywords
Related Topics
Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
Preview
Function of the parasitic bipolar transistor in the 40 nm PD SOI NMOS device considering the floating body effect
Authors
, , , ,