Article ID Journal Published Year Pages File Type
7151177 Solid-State Electronics 2012 6 Pages PDF
Abstract
► Low RESURF effectiveness found in conventional P-channel LDMOS on thin-SOI. ► NBL layer is inserted in the drift region by high energy implantation. ► Significant improvement of static performance in the proposed LDPMOS. ► Further improvement is observed by using STI partially covering the drift region.
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Related Topics
Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
Preview
Analysis and optimisation of lateral thin-film silicon-on-insulator (SOI) PMOS transistor with an NBL layer in the drift region
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