LDMOS-transistors on semi-insulating silicon-on-polycrystalline-silicon carbide substrates for improved RF and thermal properties

► In this study, devices on a new hybrid Si-on-poly-SiC are compared to devices on SOI. ► LDMOS transistors were successfully fabricated on both types of substrates. ► Devices on the hybrid substrate show significantly less self-heating. ► Devices on the hybrid substrate have ideal behavior with no sign of electrical degradation.