Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7151178 | Solid-State Electronics | 2012 | 6 Pages |
Abstract
⺠In this study, devices on a new hybrid Si-on-poly-SiC are compared to devices on SOI. ⺠LDMOS transistors were successfully fabricated on both types of substrates. ⺠Devices on the hybrid substrate show significantly less self-heating. ⺠Devices on the hybrid substrate have ideal behavior with no sign of electrical degradation.
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
S. Lotfi, L.-G. Li, Ã. Vallin, L. Vestling, H. Norström, J. Olsson,