| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7151179 | Solid-State Electronics | 2012 | 7 Pages |
Abstract
⺠The carrier number fluctuations dominate the 1/f noise (80-300 K). ⺠The extracted oxide trap density certifies the quality of the gate oxide interface. ⺠Temperature analysis of the Lorentzian noise allowed to identify traps in the Si film. ⺠Correlation between these observed traps and some technological steps was made.
Related Topics
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Engineering
Electrical and Electronic Engineering
Authors
R. Talmat, H. Achour, B. Cretu, J.-M. Routoure, A. Benfdila, R. Carin, N. Collaert, A. Mercha, E. Simoen, C. Claeys,