Improved 1/f noise characterization of strained SiGe on insulator MOSFETs fabricated on wafers obtained by the Ge enrichment technique

Article ID	Journal	Published Year	Pages	File Type
7151180	Solid-State Electronics	2012	6 Pages	PDF

Abstract

âº Low frequency noise behavior of compressively strained SiGe on insulator MOSFETs. âº cSi0.75Ge0.25 and cSi0.65Ge0.35 p- and n-channel, TiN/HfO2/SiO2 gate stacks. âº In PMOSFET devices front and back interface current noise follow the ÎN model. âº In NMOSFET devices front and back interface current noise follow the ÎN-ÎÎ¼ model. âº Impact of the back interface noise source on the front interface current.

Keywords

1/f noise Silicon–germanium MOSFET sIgE

Related Topics

Physical Sciences and Engineering Engineering Electrical and Electronic Engineering

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Improved 1/f noise characterization of strained SiGe on insulator MOSFETs fabricated on wafers obtained by the Ge enrichment technique

Authors

M. Valenza, J. El Husseini, F. Martinez, M. Bawedin, C. Le Royer, J.F. Damlencourt,