| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7151182 | Solid-State Electronics | 2012 | 5 Pages |
Abstract
⺠Analog performance of triple-gate MuGFETs fabricated in 45° rotated SOI substrates. ⺠Influence of fin width and temperature ranging from 250 K to 400 K is studied. ⺠Larger carrier mobility increase with temperature for rotated MuGFETs. ⺠The output conductance is weakly affected by the substrate rotation. ⺠Rotated MuGFETs present similar voltage gain and higher unity-gain frequency.
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Authors
Marcelo Antonio Pavanello, Michelly de Souza, Joao Antonio Martino, Eddy Simoen, Cor Claeys,