| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7151183 | Solid-State Electronics | 2012 | 6 Pages |
Abstract
⺠This work studies the GIDL current in MuGFET structures with TiN/high-k as gate stack. ⺠Thicker TiN and high-k dielectrics showed smaller GIDL current. ⺠Narrow fins exhibit reduced GIDL in spite of the larger vertical electric field. ⺠Enhanced GIDL can be achieved with pMuGFET structures.
Keywords
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
M. Galeti, M. Rodrigues, J.A. Martino, N. Collaert, E. Simoen, C. Claeys,