| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7151184 | Solid-State Electronics | 2012 | 9 Pages |
Abstract
⺠UTBB has a great potential for analog applications featuring high Id, Gm max and Av. ⺠Cut-off frequency as high as 220 GHz is achievable for 30 nm-long UTBB MOSFET. ⺠Effect of operation regime, substrate bias and channel width on Analog FoM is studied. ⺠Benchmarking of UTBB with other technologies as FD SOI, FinFETs, UTB is presented. ⺠Degradation of digital and analog FoM in temperature range up to 250 °C is very limited.
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
V. Kilchytska, M.K. Md Arshad, S. Makovejev, S. Olsen, F. Andrieu, T. Poiroux, O. Faynot, J.-P. Raskin, D. Flandre,