| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7151186 | Solid-State Electronics | 2012 | 6 Pages |
Abstract
⺠Influence of the TFET design parameters on the ambipolar current. ⺠Top and bottom contacts limit the ambipolar current. ⺠The scaling of the Silicon (Si) TFET is limited by the length of the drain spacer.
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Hraziia Hraziia, Andrei Vladimirescu, Amara Amara, Costin Anghel,