| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7151187 | Solid-State Electronics | 2012 | 8 Pages |
Abstract
⺠We computationally study the electronic structure of strained silicon nanowires. ⺠We explore the design space for nanowire devices spanned by strain and confinement. ⺠The device performance can be significantly improved by combining the two effects. ⺠Our results are in good agreement with recent experimental findings.
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Authors
Zlatan StanojeviÄ, Viktor Sverdlov, Oskar Baumgartner, Hans Kosina,