| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7151235 | Solid-State Electronics | 2011 | 9 Pages |
Abstract
A 2D TCAD based device architecture exploration of SiGe:C NPN HBTs is presented. Two novel and one conventional self-aligned architectures are explored by process and device simulation. All these three architectures show their capability of achieving maximum oscillation frequency (fmax) of 500Â GHz for scaled layout rules.
Keywords
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Arturo Sibaja-Hernandez, Shuzhen You, Stefaan Van Huylenbroeck, Rafael Venegas, Kristin De Meyer, Stefaan Decoutere,