Article ID Journal Published Year Pages File Type
7151275 Solid-State Electronics 2011 6 Pages PDF
Abstract
The gate dielectric breakdown (BD) reversibility in MOSFETs with ultra-thin hafnium based high-k dielectric is studied. The phenomenology is analyzed in detail and the similarities with the resistive switching phenomenon emphasized. The results suggest that the conductive path in the dielectric after BD can be 'opened' and 'closed' many times and that the BD recovery partially restores not only the current through the gate, but also the MOSFET channel related electrical characteristics.
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Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
Preview
Resistive switching-like behavior of the dielectric breakdown in ultra-thin Hf based gate stacks in MOSFETs
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