Article ID Journal Published Year Pages File Type
7151291 Solid-State Electronics 2011 6 Pages PDF
Abstract
Between 1 ms and 10.000 s after stress, the NBTI induced number of cell flips decreases by about one third. Many hours later, the number of flips reduces to about one half of the initial cell flips at 1 ms after end of stress.
Keywords
Related Topics
Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
Preview
A method to analyze the impact of fast-recovering NBTI degradation on the stability of large-scale SRAM arrays
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