Article ID Journal Published Year Pages File Type
7180640 Precision Engineering 2016 10 Pages PDF
Abstract
The flatness measurement of large and thin wafers is affected greatly by gravity. Inverting method is often used to cancel the effect. However, it is required that the positions of the supports and wafers are perfectly symmetric about the inversion axis. In this study a three-point-support method based on position determination of supports and wafers was proposed. The supporting balls and the wafer were placed in arbitrary positions and their positions were obtained by measurement and fed into the FEM model which was developed to calculate the gravity-induced deflection (GID). The methods to acquire the positions of the supports and the wafer were proposed. The position measurement accuracy of the supports was improved greatly by circle fitting to the profile of the supporting ball. Wafer edge point was obtained accurately as the intersection point between the wafer surface line and the edge profile. The method to measure the wafer thickness using only one displacement sensor on the same equipment was presented. The simulation results were verified by experimental results. The centering device for the wafer and the positioning accuracy requirements of the supports are not needed any more. The effect of the positions of the supports and the wafer was reduced to be less than 1 μm for a 300 mm diameter and 397 μm thickness wafer with GID over 140 μm. This method could also be used for accurate flatness measurement of other large and thin panels.
Related Topics
Physical Sciences and Engineering Engineering Industrial and Manufacturing Engineering
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