Graphene based effectual photodetector for photonic integrated circuit

Graphene based p-i-n photodetector circuit is thoroughly addressed in the present research at signal of 650 nm, where intrinsic layer is wrapped with graphene material and it plays vital role to realise effectual detector. To accomplish the same, various parameters of intrinsic layer such as reflectance, transmittance, absorbance, and photocurrent and quantum efficiency are lucidly included to compute the overall transmitted efficiency of the proposed photodetector. Reflectance as well as transmittance is examined by employing plane wave expansion (PWE) method whereas numerical equations are used to find other aforementioned parameters of the intrinsic graphene layer. Simulation results affirm that there is negligible reflectance of 0.0000002 and transmittance of 0.05 from the graphene layer whereas 94% of light get absorbed in the intrinsic layer, pertaining to the proposed structure, and as a result of which intrinsic graphene layer generates massive photocurrent with respect to apposite potential difference in the photodetector circuit. Moreover, photocurrent and quantum efficiency of the said photodetector is analysed with the variation of potential across the photodetector. Finally, it is divulged that photocurrent increases from 3.01 mA to 3.10 mA and quantum efficiency increases from 38.33% to 39.44% with the variation of applied voltage from 0.34 V to 0.43 V respectively. The above piece of work asserts that graphene material is a suitable candidate for photodetector as well as photonic integrated circuits.