Hot-electron photodetection based on embedded asymmetric nano-gap electrodes

Hot electrons generated from the nonradiative decay of surface plasmons can be employed in photodetection. However, only a small percentage of these hot electrons can be collected. In this paper, a type of hot-electron photodetector based on embedded asymmetric nano-gap electrodes is proposed which can enhance hot-electron collection efficiency. Due to this structure, the device can achieve responsivities as high as 3.75 mA/W and 1.58 mA/W for wavelengths of 1310 nm and 1550 nm, respectively. These insights can enhance efficiencies and lower cost in optical communication systems.