Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7223479 | Optik - International Journal for Light and Electron Optics | 2018 | 8 Pages |
Abstract
A series of porous silicon (PSi) samples was prepared using photoelectrochemical etching (PECE) method with optimum current density of 45â¯mA/cm2. The as-prepared PSi samples were characterized to determine the influence of the etching time (15, 25 and 30â¯min) on their morphology and electrical properties. The percentage of porosity was estimated via gravimetric analysis. The band gap of the fabricated PSi was â2.22â¯eV. Upon their use to fabricate metal-semiconductor-metal (MSM) ultraviolet photodetectors (UVPD), the fabricated PSi revealed excellent stability and reliability under repetitive shots at 530â¯nm. Furthermore, very fast rise time (â0.28â¯s) was obtained at a bias of 1â¯V under visible light (530â¯nm) illumination.
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Authors
Asad A. Thahe, Hazri Bakhtiar, Noriah Bidin, Z. Hassan, M.A. Qaeed, Asmiet Ramizy, Zainal A. Talib, Naser M. Ahmed, Khalid Omar, Hasan Alqaraghuli, M. Husham, Nageh K. Allam,