Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7223677 | Optik - International Journal for Light and Electron Optics | 2018 | 6 Pages |
Abstract
In this work, we have successfully prepared the highly conducting and transparent In doped ZnO thin films on glass substrate using sol-gel spin-coating technique. Indium was incorporated with different concentrations of 1, 2, and 4â¯at.%. The effect of indium doping on the structural, optical and electrical properties of the produced films have been investigated. X-ray diffraction analysis showed that all the films were polycrystalline with a hexagonal würtzite structure.The growth along (002) orientation was only preferred for 2â¯at.% doping concentration. The transparency of In doped ZnO thin films varied from 70 to 92% in visible range. Zinc oxide thin film doped with 4â¯at.% concentration revealed the largest grain size, the lowest optical gap, the highest intrinsic defects amount, and the lowest resistivity which was found to be 6.10â¯Ãâ¯10â4â¯Î©â¯cm. These In doped ZnO thin films can have big interest in solar cell industry.
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Authors
Abdelhamid Bouaine, Amira Bourebia, Hassan Guendouz, Zineb Riane,