Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7223942 | Optik - International Journal for Light and Electron Optics | 2018 | 5 Pages |
Abstract
In this work by using the transfer matrix method we calculated the transmittance spectrum of a one-dimensional photonic crystal composed of alternating layers of GaAs and Ga0.7Al0.3As with a GaAs defect. We found the presence of a defect mode within the photonic band gap with a maximum transmittance value, where the position of the mode depends on the angle of incidence. As the angle is increased, the position of the mode is smaller compared to that of the normal incidence accompanied by a decrease in the width of the defect mode. Additionally, we found that by increasing the applied hydrostatic pressure, the dielectric constant of the GaAs decreases, causing an additional shift of the spectrum at short wavelengths.
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Authors
Francis Segovia-Chaves, Herbert Vinck-Posada,