Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7224245 | Optik - International Journal for Light and Electron Optics | 2018 | 5 Pages |
Abstract
In this paper we report the photo-trapping effect of photogenerated charge in a few numbers of silicon nanocrystals (Si-NCs) embedded in SiO2 layer tunnel oxide of small area single electron photodetector (Photo-SET or nanopixel). Using Current-Voltage measurements under illumination (photo-I-V) we find the photo-active traps effect in inversion zone at room temperature. Random Telegraphic Signal under illumination (photo-RTS analysis) confirms that is a photo-generated active trap inside into tunnel oxide layer (Ephoto-actâ¼ 0.2 â¯eV) and capture section: Ïâ¼8.72â¯Ãâ¯10â17â¯cm2). Moreover, an increasing about 10â¯pF in capacity's values in the inversion region for inverse high voltage applied under photo-excitation at low temperature have been marked using photo-Capacitance-Voltage (photo-C-V) measurements. This result confirms the contribution of photo-active traps to better dots photo-charged. The increase of light excitation time-duration, increase the hysteresis width. At 100â¯Î¼W optical power and 595â¯nm wavelength, the hysteresis width has their saturation for a 0,05V/s romp speed, and consequently, SiO2 will not behave a dielectric, but as a metal. So we make think that total capacity of structure no more corresponds to the capacity related to the oxide, but to all structure capacity values. The nanopixel photo-detection time (â¼400â¯s) estimated from the flat band evolution in time is affected by photo-active oxide traps presence.
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Authors
S. Chatbouri, M. Troudi, Na. Sghaier, A. Kalboussi, A. Souifi,