| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7224281 | Optik - International Journal for Light and Electron Optics | 2018 | 9 Pages |
Abstract
We calculated the changes of refractive index and absorption coefficient in Ge induced by the Franz-Keldysh (FK) effect and free carrier dispersion (FCD) effect, taking advantage of reported absorption spectra.The FK effect is weak near the indirect absorption edge of Ge. FCD effect can induce a much larger change of refractive index. In the wavelength range of 2-10â¯Î¼m, theoretical formulas about dependences of the changes of absorption coefficient and refractive index on the change of carrier concentrations are presented. In addition, FCD effects in N-type and P-type Ge are compared.
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Authors
Li Zhang, Qi Wang, Xin Wang, Haiyan Quan, Zhanguo Chen, Xiuhuan Liu, Lingying Qiu, Jihong Zhao, Lixin Hou, Yanjun Gao, Gang Jia,