Article ID Journal Published Year Pages File Type
7224333 Optik - International Journal for Light and Electron Optics 2018 11 Pages PDF
Abstract
In the present study, Fe3+ doped ZnSe thin films are deposited using the galvanostatic mode of electrodeposition. Further, deposited thin films are characterized using X-ray diffraction study, X-ray photoelectron spectroscopy and Raman spectroscopy for their confirmation. After that morphological study is carried using field emission scanning electron microscopy, topological study is carried using atomic force microscopy (AFM). Optical properties are studied using optical absorbance and photoluminescence. The electrochemical properties are studied using electrochemical impedance spectroscopy. The most important part is study of photoelectrochemical properties. In the present study, 0.75% Fe3+ doped ZnSe thin film shows the relatively better photoelectrochemical cell performance than the other deposited thin films due to dandelion like nature. The observed short circuit current is 155 μA and open circuit voltage is 487 mV. The calculated Fill factor and efficiency are 0.35 and 0.17%, respectively.
Related Topics
Physical Sciences and Engineering Engineering Engineering (General)
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