Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7224584 | Optik - International Journal for Light and Electron Optics | 2018 | 20 Pages |
Abstract
The V (5 wt.%) doped In2O3 (V: In2O3) thin films with the thickness of 50-150 nm were deposited on to glass substrate by electron beam evaporation technique and the deposited films were annealed at 200 °C in air for 2 h. The annealed films were characterized by structural, electrical, optical and photoluminescence properties. X-ray diffraction (XRD) pattern shows that the film is an amorphous nature. The negative sign of the Hall coefficient indicates the n-type conductivity. Experimental results show that the resistivity and transmittance of the films are strongly influenced by film thickness and post deposition annealing. A minimum resistivity of 6.22 Ã 10â3 Ω cm, a carrier concentration of 5.23 Ã 1019 cmâ3, a Hall mobility of 19.21 cm2 Vâ1 sâ1 and a figure of merit of 1.04 Ã 10â4 Ωâ1 are observed for the film with thickness of 150 nm. After annealing the films, the average transmittance is enhanced up to 84% in the near infrared region. The blue-shift of optical band gap is found to increase from 1.62 to 2.25 eV with increasing the thickness, whereas the refractive index decreases from 2.92 to 2.64. Structural disorder was observed from the Urbach's tail. A prominent and high intense orange emission is achieved at room temperature, which may be attributed to oxygen deficiencies or intrinsic defects.
Related Topics
Physical Sciences and Engineering
Engineering
Engineering (General)
Authors
Md. Ariful Islam, Jannatul Robaiat Mou, Ratan Chandra Roy, Jaker Hossain, Md. Julkarnain, Khairul Alam Khan,