Temperature dependence of defect mode in band structures of the one-dimensional photonic crystal

Using the plane wave expansion method the effect of temperature variation and the thickness of the defect in a one-dimensional photonic crystal consisting of alternate layers of silicon and air in the band structures has been investigated. The refractive index of silicon layers is taken as a function of temperature and wavelength. It is found that there exists defect mode within the forbidden frequency gap in the band structures. It is shown that increasing the temperature originates a defect mode shift in the band structure at low frequencies due to contrast increase of the refractive index.