Elimination of quenching defects by facile anion doping in CdSiO3 synthesized by green fuel assisted combustion method

Despite being simple, and economical method, solution combustion synthesis (SCS) method's applicability in preparation of silicate based phosphors is seriously limited. This is due to the fact that SCS method results in samples with quenching defects.We present a simple one pot synthesis technique for eliminating the defects in CdSiO3 by simple anion doping. We show that just by mere addition of SO42− anion, defects related to different kinds of oxygen vacanices disappear and PL spectra shows pure blue emission. Powder X-ray diffraction (PXRD) and scanning electron microscopy (SEM) reveals that the SO42−doped CdSiO3 exhibits monoclinic phase and rod-like microstructure morphology respectively. Photoluminescence (PL) results reveal that the SO42− doped CdSiO3 shows a single emission at 406 nm under the excitation wavelength of 259 nm. Where as undoped CdSiO3 phosphor presented a series of emission peaks ranging from UV to green (349, 404, 423, 444, 472, 508 and 529 nm) under the same excitation wavelength.