| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 724010 | III-Vs Review | 2006 | 5 Pages |
Abstract
Silicon carbide (SiC) has been proposed for some time as a substrate for high-speed, high-temperature devices, and products are now entering the market. Dr Mike Cooke reviews some of SiC's device opportunities and tough process challenges.
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Mike Cooke,