| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 724807 | Journal of Electrostatics | 2006 | 8 Pages |
Abstract
Analytical solutions of the surface potential distribution on a thin material with a grounded backing conductor have been obtained by using a model of a distributed resistor–capacitor network. In this paper, the steady-state and transient solutions of the surface potential on a thin-rectangular material are used to determine the resistance to ground and charge relaxation. The theoretical solutions demonstrate that both the resistance and charge relaxation as well as the surface potential distribution strongly depend on ρs/(ρvδ)ρs/(ρvδ), that is, the ratio of surface resistance to volume resistance per unit square area, where ρsρs: surface resistivity, ρvρv: volume resistivity, and δδ: thickness.
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Authors
A. Ohsawa,