Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
724818 | Journal of Electrostatics | 2006 | 8 Pages |
Abstract
A dual-direction ESD protection approach is applied to the problem of 60 V tolerant on-chip protection of the thin film resistors in automotive application circuits realized in 5 V BiCMOS process. A novel method for increasing the breakdown voltage of a blocked N-isolation layer is proposed and validated using process and device numerical simulation followed by experimental measurements.
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
V.A. Vashchenko, W. Kindt, P. Hopper,