Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
724823 | Journal of Electrostatics | 2006 | 13 Pages |
Abstract
The temperature rise from electrical over-stress (EOS) and electrostatic discharge (ESD) of shielded AMR sensors used for magnetic tape storage devices is studied using square wave voltage pulses with widths from 35 ns to 2 ms. A phenomenological model has been developed to describe the dynamic stripe temperature versus pulse width and power for the time range studied as well as for a wide range in sensor geometries. The temperature required to melt the stripes was determined to be 1437±69âC. The activation energy required to achieve a 2% increase in stripe resistance for pulses between 100 ns and 1 ms was determined to be 2.8 eV and is associated with interdiffusion of the stripe metals.
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Icko Eric Timothy Iben,