Calculation of valence band structures of InAs/GaAs quantum ring and quantum dot: using numerical Fourier transform method

This article puts forward a new method in calculating the band structures of low-dimensional semiconductor structures. In this study, the valence band structures of InAs/GaAs quantum ring and lens-shaped quantum dot are calculated with four-band model, in the framework of effective-mass envelope function theory. To determine the Hamiltonian matrix elements, this article develops the numerical Fourier transform method instead of the widely used analytical integral method. The valence band mixing is considered. The hole energy levels change dramatically with the geometrical parameters of the quantum ring and quantum dot. It is demonstrated that numerical Fourier transform method can be adopted in low-dimensional structures with any shape. The results of Fourier transform method are consistent with the ones of analytical integral in literature; and they are helpful for studying and fabricating optoelectronic devices.