Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
726368 | Journal of Electrostatics | 2006 | 8 Pages |
Abstract
In this study, we show that increased parasitic capacitance across lateral NPN (LNPN) devices does not necessarily enhance the electro-static discharge (ESD) robustness. Since the drain-bulk displacement current decreases, the LNPN avalanche trigger current increases and the PN junctions fail early. In our case, this happened when the parasitic capacitance between supply lines is around several hundreds of Pico-Farads.
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Teruo Suzuki, Junji Iwahori, Teruo Morita, Haruyoshi Takaoka, Toshio Nomura, Kenji Hashimoto, Shoji Ichino,