| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 726387 | The Journal of China Universities of Posts and Telecommunications | 2006 | 4 Pages |
Abstract
This paper discusses the design of a fully differential 2.1 GHz CMOS low noise amplifier using the TSMC 0.25 μm CMOS process. Intended for use in 3G, the low noise amplifier is fully integrated and without off-chip components. The design uses an LC tank to replace a large inductor to achieve a smaller die area, and uses shielded pad capacitances to improve the noise performance. This paper also presents evaluation results of the design.
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